| 摘要 |
Provided are a semiconductor memory device and a test method thereof. The semiconductor memory device includes: a die in which a plurality of internal circuits are integrated; a plurality of first and second channel pads having a first pad size and a first pad pitch, disposed in an alternating manner in a straight line at a center part of the die, and divided into a plurality of parallel rows, wherein the plurality of first and second channel pads are configured to selectively contact test probes in an alternating manner to receive an external wafer test signal and to output a signal generated by the plurality of internal circuits to the exterior. Therefore, it is possible to perform a test using plural channel pads during a wafer test of the semiconductor memory device using a plurality of probes of a probe card without incorrect contacts or non-contact with adjacent pads.
|
