发明名称 Gate drive for wide bandgap semiconductor device
摘要 A gate drive circuit for a wide bandgap semiconductor junction gated transistor includes a gate current limit resistor. The gate current limit resistor is coupled to a gate input of the wide bandgap semiconductor junction gated transistor when in use and limits a gate current provided to the gate input of the junction gated transistor. An AC-coupled charging capacitor is also included in the gate drive circuit. The AC-coupled charging capacitor is coupled to the gate input of the wide bandgap semiconductor junction gated transistor when in use and is positioned parallel to the gate current limit resistor. A diode is coupled to the gate current limit resistor and the AC-coupled charging capacitor on one end and an output of a gate drive chip on the other end When in use, the diode lowers a gate voltage output from the gate drive chip applied to the gate input of the wide bandgap semiconductor junction gated transistor through the gate current limit resistor. The gate drive circuitry provides a small, efficient, and cost effective control circuitry for a wide bandgap semiconductor junction gated transistor.
申请公布号 US7782118(B2) 申请公布日期 2010.08.24
申请号 US20070790973 申请日期 2007.04.30
申请人 NORTHROP GRUMMAN SYSTEMS CORPORATION 发明人 REICHL JOHN VINCENT;BULGHER DAVID EVERETT;MCNUTT TY R.
分类号 H03K17/687 主分类号 H03K17/687
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