发明名称 |
Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer |
摘要 |
Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.
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申请公布号 |
US7781332(B2) |
申请公布日期 |
2010.08.24 |
申请号 |
US20070857805 |
申请日期 |
2007.09.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ARNOLD JOHN C.;PURUSHOTHAMAN SAMPATH;SANKARAPANDIAN MUTHUMANICKAM;SHOBHA HOSADURGA K.;SPOONER TERRY A. |
分类号 |
H01L21/4763;H01L21/302 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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