发明名称 Semiconductor device and method of fabricating the same
摘要 The present invention discloses a semiconductor device and a method of manufacture thereof. The present invention prevents from leaning or collapsing in the subsequent dip-out process by making the bottom plate of adjacent capacitors to be connected each other and supported each other in patterning the conductive layer for the bottom plate of capacitor.
申请公布号 US7781297(B2) 申请公布日期 2010.08.24
申请号 US20080114659 申请日期 2008.05.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SEO WON SUN
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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