| 摘要 |
A method of depositing a thin film may include providing a wafer into a thin film apparatus, rotating the wafer, flowing a plasma across the wafer from edge to edge, depositing a first thin film on the wafer, creating a temperature gradient within the thin apparatus, and depositing a second thin film on the wafer. The temperature gradient may include having the temperature at the center of the wafer being higher than the temperature at the edges of the wafer.
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