发明名称 |
Structure and method for strained transistor directly on insulator |
摘要 |
A semiconductor device (10) comprising a substrate (12) and an oxide layer (14) formed over the substrate is provided. The semiconductor device further includes a first semiconductor layer (16) having a first lattice constant formed directly over the oxide layer. The semiconductor device further includes a second semiconductor layer (26) having a second lattice constant formed directly over the first semiconductor layer, wherein the second lattice constant is different from the first lattice constant.
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申请公布号 |
US7781839(B2) |
申请公布日期 |
2010.08.24 |
申请号 |
US20070694273 |
申请日期 |
2007.03.30 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
THEAN VOON-YEW;NGUYEN BICH-YEN |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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