| 摘要 |
A manufacturing method of a semiconductor device includes forming a cobalt film on a silicon substrate on which a diffusion layer is formed, forming a titanium film on the cobalt film using a titanium target that has a surface from which a nitride film has previously been removed, forming a titanium nitride film on the titanium film in accordance with a reactive sputtering process using a gas containing a nitrogen atom and the titanium target, and performing a heat treatment to react the cobalt film with the silicon substrate, thereby accomplishing silicification.
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