| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve CMP(Chemical Mechanical Polishing) target control performance by removing an oxide layer and a nitride layer on the upper side of a hard mask pattern after forming a buffer layer with a gap fill property between hard mask patterns. CONSTITUTION: A hard mask pattern opening a gate region is formed on the upper side of a semiconductor substrate(200). A trench(213) is formed by etching a semiconductor substrate using the hard mask pattern as a mask. A gate material layer is buried in the trench. An oxide layer(220) is formed on the surface of the hard mask pattern. A nitride layer(225) is formed on the surface of the oxide layer and the gate material layer. A buffer layer(230) is buried between the hard mask patterns.</p> |
