SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THEREOF

摘要

PURPOSE: The trench for the semiconductor device and manufacturing method thereof silver element isolation region and recess trench is formed at the same time. It prevents from the silicon fence being formed between the trench for the element isolation region and recess trench. CONSTITUTION: The recess trench(110) is formed within the substrate(100). The gate insulating layer is formed in order to cover the sidewall lower part and floor side of the recess trench. The gate insulating layer comprises the second portion(130) having the thick second thickness than the first portion(120) and the first thickness having the first thickness. The gate electrode(140) fills in the recess trench.