METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A THRESHOLD VOLTAGE CONTROL REGION

摘要

PURPOSE: The manufacturing method of the semiconductor device having the threshold voltage adjusting region forms the threshold voltage adjusting region at the lower part of the gate pattern. CONSTITUTION: A semiconductor substrate(1) having the element isolation region(15s) limiting the first and second active areas of the different conductive type are prepared. The first mask pattern exposing the fixed region of the first and the second active area is formed. The first threshold voltage adjusting region(45) having the first active region and the other impurity concentration is formed in the fixed region of the first active region.