| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent the generation of a current leakage phenomenon and a latch-up phenomenon by applying a pre-set voltage to an input node. CONSTITUTION: A first power switch(21) prevents a first power voltage from being supplied to a first node in a stand-by mode. A second power-switch(24) is connected between the first node and a second node to which a second power voltage is supplied. A first power voltage driver(20) drives a first power voltage(VDD1). A second power voltage driver(22) drives a second power voltage(VDD2). An internal circuit(25) is connected between the first node and the second node. |
