| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky diode which has a device region formed directly on a surface of a support base of a group-III nitride semiconductor without forming an epitaxial layer. SOLUTION: The Schottky diode is formed directly on the surface of the support base made of a GaN-based thick film material. An ohmic electrode (50) of Ti/Al is formed directly on the back surface of n-GaN (40) being the support base, and a Schottky electrode (60) of Cu/Ni having a diameter of 100μm is formed directly on the surface. The Schottky diode has an ideal factor (n value) of 1.0 to 1.3, and also has a current value during application of a reverse voltage of -5V,≤50 times as large as a current value calculated with a TFE model. The support base includes a bulk substrate made entirely of a GaN-based thick film material, and a base having a layer of a GaN-based thick film material formed on a foundation substrate of different material, or a substrate (independent substrate) or the like obtained by peeling the foundation substrate from the base and separating the layer of the GaN-based thick film material. COPYRIGHT: (C)2010,JPO&INPIT |
