| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a field effect transistor wherein, if configured at least as a field effect transistor, errosion is suppressed in a region continuous to the interface between a source electrode and a drain electrode, in an active layer made from amorphous oxide semiconductor. Ž<P>SOLUTION: In the manufacturing method of the field effect transistor 10, a first conductive layer 20 is formed on an amorphous oxide semiconductor layer 17 in a first conductive layer forming step. Then, a resist pattern 30 is formed in a pattern formation step and a processing step. A non-protected region is etched with the resist pattern 30 so that the amorphous oxide layer 17 is processed along with the first conductive layer 20 to stack the first conductive layer 20 on an active layer 18. After this condition is established, the resist pattern 30 is peeled from the first conductive layer 20. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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