GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

The present disclosure relates to a group III nitride semiconductor light-emitting device, and more particularly, to a group III nitride semiconductor light-emitting device comprising: a plurality of group III nitride semiconductor layers having a first group III nitride semiconductor layer with a first conductivity, a second group III nitride semiconductor layer with a second conductivity different from the first conductivity, and an active layer which is interposed between the first group III nitride semiconductor layer and the second group III nitride semiconductor layer, and which generates light by the recombination of electrons and holes; a bonding pad electrically connected to the plurality of group III nitride semiconductor layers; a protective film formed on the bonding pad; and a buffer pad which is interposed between the bonding pad and the protective film, and formed to expose the bonding pad.