| 摘要 |
PROBLEM TO BE SOLVED: To obtain a solid-state memory capable of repetitively rewrite data for much more times. SOLUTION: The solid-state memory includes a recording layer 4, an upper electrode layer 6, and a lower electrode layer 3. The recording layer 4 includes two or more layers having a matrix which causes a phase transformation between solid states, wherein the two or more layers have a superlattice structure. Further, a volume change reducing layer 5 for reducing volume change caused in the phase transformation of the recording layer 4 is provided between the upper electrode layer 6 and the recording layer 4. COPYRIGHT: (C)2010,JPO&INPIT |
