| 摘要 |
A semiconductor device includes an isolation structure formed in a semiconductor substrate to delimit an active region. The active region includes a gate forming area. Spacers are formed on the side surfaces of the active region excluding portions of the side surfaces of the active region at the gate forming area, such that side surfaces of the gate forming area of the active region are exposed. A gate is formed to cover the exposed gate forming area of the active region.
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