METHOD FOR FABRICATING A VERTICALLY STRUCTURED, NITRIDE-BASED LIGHT-EMITTING DEVICE
摘要
The present disclosure relates to a method for fabricating a vertically structured, nitride-based light emitting device comprising the following steps: preparation of a substrate; formation of a trench on the substrate by either a laser- or a diamond-cutting process; cultivation of a nitride-based semiconductor layer on the substrate; and separation of said nitride-based semiconductor layer from the substrate.
申请公布号
WO2010058991(A3)
申请公布日期
2010.08.19
申请号
WO2009KR06847
申请日期
2009.11.20
申请人
WOOREE LST CO., LTD.;KIM, KEUK;CHOI, YU HANG;CHO, SOO YEON;PARK, CHI KWON
发明人
KIM, KEUK;CHOI, YU HANG;CHO, SOO YEON;PARK, CHI KWON