| 摘要 |
<p>Disclosed is a polishing agent for copper polishing, which contains (A) a divalent or higher-valent inorganic acid, (B) an amino acid, (C) a protective film-forming agent, (D) abrasive grains, (E) an oxidizing agent and (F) water. The component (A) is contained in an amount of not less than 0.08 mol/kg, the component (B) is contained in an amount of not less than 0.20 mol/kg, and the component (C) is contained in an amount of not less than 0.02 mol/kg. The polishing agent for copper polishing satisfies at least either of the following condition (i) or (ii). (i) The ratio of the content of the component (A) to the content of the component (C) is not less than 2.00. (ii) The polishing agent for copper polishing additionally contains (G) at least one substance selected from among organic acids and acid anhydrides thereof.</p> |
