THREE-DIMENSIONAL NETWORK IN CMP PAD

摘要

The present disclosure is directed at a chemical-mechanical planarization polishing pad comprising interconnecting elements and a polymer filler material, wherein the interconnecting elements include interconnecting junction points that are present at a density of 1 interconnecting junction point/cm3 to 1000 interconnecting junction points/cm3, and wherein the interconnecting elements have a length between interconnection junction points of 0.1 microns to 20 cm.