| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor and a method for manufacturing the same which have a large on current, and small variations in an electric characteristic. SOLUTION: As a crystal particle size of silicon forming a channel layer 141 of a peripheral TFT 110 is formed of micro crystal silicon, the variations of a threshold value voltage are suppressed to a certain degree while an on current is increased. However, as compared with the peripheral TFT having the channel layer composed of polycrystal silicon, only the small on current can be made to flow. Then, a gate electrode 195 is further formed on a surface of a silicon nitride film 180 opposing a gate electrode 125 of the peripheral TFT 110. As a result, as the on current flowing in a channel layer 341 is controlled by the two gate electrodes 125 and 195, it is possible to compensate for an insufficient portion of the on current. COPYRIGHT: (C)2010,JPO&INPIT |
