| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-noise, high-speed semiconductor device with a high integration degree. SOLUTION: The manufacturing method of the semiconductor device includes a hole forming process of forming a contact hole common to a first conductivity type region and a second conductivity type region, an implantation process of implanting an impurity in at least one of the first conductivity type region and a second conductivity type region, and a plug forming process of forming a shared contact plug by charging a conductive material in the contact hole. In the implantation process, the impurity is implanted in at least one of the first conductivity type region and the second conductivity type region so that the first conductivity type region and the shared contact plug come into ohmic-contact with each other and the second conductivity type region and the shared contact plug come into ohmic-contact with each other. COPYRIGHT: (C)2010,JPO&INPIT |
