发明名称 POLISHING COMPOSITION
摘要 At least one embodiment of the invention provides a polishing composition that can achieve high polishing rate and as well can improve flatness. The polishing composition of at least one embodiment of the invention is a polishing composition suitable for a metal film, particularly a copper (Cu) film, and contains a basic compound containing an ammonium group, alkyl naphthalene sulfonate and hydrogen peroxide, the remainder being water. The pH of the polishing composition is within a range of 8 to 12. By containing those, a polishing composition that can achieve high polishing rate and improve flatness can be realized.
申请公布号 US2010207058(A1) 申请公布日期 2010.08.19
申请号 US20080733328 申请日期 2008.08.25
申请人 MATSUMURA YOSHIYUKI;NITTA HIROSHI 发明人 MATSUMURA YOSHIYUKI;NITTA HIROSHI
分类号 C09K13/00 主分类号 C09K13/00
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