NONVOLATILE MEMORY DEVICE HAVING VERTICAL FOLDING STRUCTURE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: The non-volatile memory device and manufacturing method thereof of the vertical folding structure arrange the NAND string to the folding structure. Height is controlled appropriately even when having the vertical structure. CONSTITUTION: In order to have the folding structure of being extended on the substrate(105) perpendicularity the semiconductor structure(130a) is offered. The semiconductor structure comprises the bottom part(31), and the first sidewall part(32) and the second sidewall part(33). The buried insulating layer(132) fills the space between second side walls and the first. A plurality of control gate electrodes is separately placed according to the first and second sidewall parts.