| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-quality nonvolatile semiconductor storage that makes compatible gaining both a high speed and a high degree of integration, and to provide a method of manufacturing the nonvolatile semiconductor storage. Ž<P>SOLUTION: In a split-gate type nonvolatile semiconductor storage having a FINFET structure, one and the other of a selective gate electrode and a memory gate electrode provided in directions that cross a plurality of grooves provided in parallel with the surface of a semiconductor substrate are formed first and on the sidewall of the gate electrode formed first, respectively, and source/drain regions are provided at projections between the grooves, while sandwiching the selective gate electrode and the memory gate electrode. In the flip-gate type nonvolatile semiconductor storage, a difference (difference between H2 and H3) between the height of the surface of the selective gate electrode and that of the surface of the memory gate electrode is set to not less than a difference H1, between the height of the surface of the insulating layer provided on a bottom face of the grooves and that of the surface of the source/drain regions. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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