| 摘要 |
PROBLEM TO BE SOLVED: To provide a production process of a semiconductor device having a trench structure with a high breakdown voltage. SOLUTION: The production process of the semiconductor device, having a structure in which an insulating layer is such that it has formed in a lower portion of a trench; an electrode is formed in the trench in an upper portion of the insulating layer and an insulating film is formed on a wall surface of the trench in a range in contact with the electrode includes the steps of: forming a trench, forming an insulating layer in a lower portion of the trench; forming a mask layer on a wall surface of the trench in an upper portion of the insulating layer to expose the insulating layer in the bottom portion of a gap between the mask layer formed on one wall surface and a mask layer formed on the other wall surface, applying isotropic etching to the insulating layer from the bottom portion of the gap, causing the upper surface of the insulating layer to have a concave curved form, and removing the mask layer; forming an insulating film on the wall surface of the trench; and forming an electrode in the trench. COPYRIGHT: (C)2010,JPO&INPIT
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