发明名称 Structure and Methods for Measuring Margins in an SRAM bit
摘要 Methods for measuring the read margin, write margin, and stability margin of SRAM bits with operational circuitry that includes effects of the SRAM array architecture and circuit design. In addition, methods for measuring the read margin, write margin, and stability margin of SRAM that excludes the effects of SRAM array architecture and circuit design.
申请公布号 US2010208536(A1) 申请公布日期 2010.08.19
申请号 US20090388439 申请日期 2009.02.18
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 DENG XIAOWEI;HOUSTON THEODORE W.;LOH WAH KIT
分类号 G11C29/00;G11C7/00;G11C8/08 主分类号 G11C29/00
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