| 摘要 |
A semiconductor device having a small parasitic resistance and a high driving current is provided. The semiconductor device includes a fin portion that includes a pair of source/drain regions located on both end sides and a channel region sandwiched between the pair of source/drain regions; films that are formed on both sides in a channel-width direction of the fin portion; a gate electrode that is provided so as to stride across the channel region of the fin portion; a gate insulating film that is interposed between the gate electrode and the channel region; and a stress applying layer that applies a stress to the channel region of the fin portion, an upper surface and side surfaces of the source/drain region being coated with the stress applying layer in the fin portion, a lower end surface of the stress applying layer being in contact with the film with no gap.
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