发明名称 NANO-LOGIC CIRCUITS AND THE METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: By embodying the depletion mode nanowire transistor and the logic circuit consisting of the propagating nanowire transistor the nano device logic circuit and manufacturing method thereof can improve gain and noise margin of the logic circuit. CONSTITUTION: The element substrate comprises the first element area and the second element area. The depletion mode nanowire transistor(200) is arranged on the first element area. The propagative nanowire transistor(300) is arranged on the second element area. The wire portion(400) electrically interlinks the depletion mode nanowire transistor and propagative nanowire transistor.
申请公布号 KR20100091598(A) 申请公布日期 2010.08.19
申请号 KR20090010875 申请日期 2009.02.11
申请人 GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 JO, GUN HO;HONG, WONG KI;LEE, TAK HEE
分类号 H01L21/336;B82B3/00 主分类号 H01L21/336
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