发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which suppresses abnormal discharge in a gas hole part, thereby preventing damage of a sample table caused by the abnormal discharge, and has the high reliability and stability of the device. SOLUTION: In the plasma processing apparatus including a vacuum chamber, a sample table for mounting a member to be processed thereon, the sample table having a coolant path to control a temperature of the member to be processed, an electrostatic sucking power supply for electrostatically sucking the member to be processed on the sample table, and a plurality of gas hole parts provided in the sample table to supply heat transfer gas between the member to be processed and the sample table and thereby control a temperature of the member to be processed, each of the gas hole parts includes a boss formed of a dielectric, a sleeve, and a plurality of small tubes, and the small tubes are arranged in a range of 10 to 50% of a radius when measured from a center of the gas hole part toward the outside. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010182763(A) 申请公布日期 2010.08.19
申请号 JP20090023202 申请日期 2009.02.04
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KAWAKAMI MASATOSHI;ARAMAKI TORU;SHIRAYONE SHIGERU;YOKOGAWA KATANOBU;TANDO TAKUMI
分类号 H01L21/3065;H01L21/683 主分类号 H01L21/3065
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