发明名称 Method of Producing Sintered Compact, Sintered Compact, Sputtering Target Formed from the same, and Sputtering Target-Backing Plate Assembly
摘要 Provided is a method of producing a sintered compact including the steps of mixing raw material powders respectively composed of a chalcogenide element and a Vb group element or raw material powders of an alloy of two or more elements including a chalcogenide element and a Vb group element, and hot pressing the mixed powder under conditions that satisfy the following formula: P(pressure)≰{Pf/(Tf−T0)}×(T−T0)+P0(Pf: final pressure, Tf: final temperature, P0: atmospheric pressure, T: heating temperature, T0: room temperature, and temperatures in Celsius). This method is able to produce a high-density, high-strength and large-diameter sintered compact containing a chalcogenide element (A) and a Vb group element (B) or containing the element (A) and (B) and additionally a IVb group element (C) and/or an additive element (D) which is free from cracks even when it is assembled and used as a sputtering target-backing plate assembly. Additionally disclosed are such a sintered compact, a sputtering target configured of such a sintered compact, and a sputtering target-backing plate assembly.
申请公布号 US2010206724(A1) 申请公布日期 2010.08.19
申请号 US20080676767 申请日期 2008.07.17
申请人 NIPPON MINING AND METALS CO., LTD. 发明人 TAKAHASHI HIDEYUKI
分类号 C23C14/34;B22F1/00;B22F3/14 主分类号 C23C14/34
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