发明名称 |
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, HIGH CARRIER MOBILITY TRANSISTOR AND LIGHT EMITTING DEVICE |
摘要 |
Provided are a semiconductor device, a semiconductor device manufacturing method, a high carrier mobility transistor and a light emitting device. The semiconductor device is provided with a semiconductor layer including N and Ga, a conductive layer ohmic-connected to the semiconductor layer, a metal-distributed region where metal exists by being distributed at an interface between the semiconductor layer and the conductive layer, and a metal intrusion region where the atoms of the metal exist by entering the semiconductor layer.
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申请公布号 |
US2010207137(A1) |
申请公布日期 |
2010.08.19 |
申请号 |
US20080669164 |
申请日期 |
2008.07.17 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
SAZAWA HIROYUKI;HONDA YOSHIAKI |
分类号 |
H01L33/12;H01L21/20;H01L21/28;H01L29/12;H01L29/778 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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