| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor amplifier capable of improving gain characteristics by reducing the inductance components between a source pad and the ground and suppressing decrease in gains. <P>SOLUTION: Between at least one of an input matching circuit substrate 17 and an output matching circuit substrate 18 and a transistor chip 10, a protrusion 30 is provided, the protrusion 30 having a height almost equal to at least the surface of a source pad 4 of the transistor chip 10 which forms electrical ground plane on a metal carrier. The source pad 4 is electrically connected to the top of the protrusion by wire bonding, thus realizing the source ground structure of the transistor chip 10. <P>COPYRIGHT: (C)2010,JPO&INPIT |
