SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a technology improving reliability by suppressing degradation of driving power, in a semiconductor device including a nonvolatile memory cell. SOLUTION: A memory cell MC1 is formed with a selecting pMIS (Qpc) having a selection gate electrode CG formed of a conductive film exhibiting p-type conductivity, and a pMIS (Qpm) for a memory having a memory gate electrode MG formed of a conductive film exhibiting p-type conductivity; hot electrons are injected into a charge storage layer CSL from a semiconductor substrate 1 side upon writing; and hot holes are injected into the charge storage layer CSL from the memory gate electrode MG upon erasing. COPYRIGHT: (C)2010,JPO&INPIT