| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element capable of improving the adhesive properties between a low dielectric-constant material and a semiconductor material. SOLUTION: A columnar mesa section 17 is provided on a substrate 10, where the columnar mesa section 17 includes a lower DBR layer 11, a lower spacer layer 12, an active layer 13, an upper spacer layer 14, an upper DBR layer 15, and a contact layer 16, in this order starting from the side of the substrate 10. An annular upper electrode 21 is provided on an upper surface of the mesa section 17, and an electrode pad 23, electrically connected to the upper electrode 21, is provided around the mesa section. A pedestal section 26 is provided directly below the electrode pad 23. The pedestal section 26 includes a ruggedness section 26A made of a semiconductor oxide; and an embedded section 26B made of a low dielectric-constant material. The ruggedness section 26A has a ruggedness structure, and the embedded section 26B is formed so that it embeds the ruggednesses of the ruggedness structure. COPYRIGHT: (C)2010,JPO&INPIT
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