发明名称 X-RAY DETECTOR AND FABRICATION METHOD THEREOF
摘要 A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.
申请公布号 US2010207033(A1) 申请公布日期 2010.08.19
申请号 US20090553982 申请日期 2009.09.03
申请人 CHEN YU-CHENG;CHO AN-THUNG;CHUANG CHING-SANG;PENG CHIA-TIEN 发明人 CHEN YU-CHENG;CHO AN-THUNG;CHUANG CHING-SANG;PENG CHIA-TIEN
分类号 G01T1/20;H01L21/20;H01L21/336;H01L29/786 主分类号 G01T1/20
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