| 摘要 |
733,267. Semi-conductor rectifiers. GENERAL ELECTRIC CO. May 18, 1953 [May 22, 1952No. 13887/53. Class 37. A rectifier comprises a layer 11 of partially reduced titanium dioxide on a face plate 10 of titanium, and a counter electrode 12 of bismuth, nickel or platinum The partially reduced titanium dioxide layer may be provided by heating a titanium plate in an oxygen atmosphere to between 600‹ C.'and 800‹ C., and then in a hydrogen atmosphere to effect the partial reduction. Alternatively, the titanium plate may be heated in steam to about 650‹ C. which effects both oxidation and reduction. The counter electrode 12 may be applied from the molten state, or by vapour deposition. An additional layer of a semi-conducting oxide such as an oxide of Ge, Si or Ti may be provided between the counter electrode and the titanium dioxide layer. |
