METHOD FOR MANUFACTURING GAN-BASED SEMICONDUCTOR LIGHT EMITTING DIODE

摘要

PURPOSE: The manufacturing method of the nitride semiconductor light emitting device is that the globe of the nanoscale through the wet etching of the poly-crystal oxide film is formed in the surface of the nitride system light emitting diode. CONSTITUTION: A plurality of nitride base cermets simiconductor layers is formed on the substrate(10). The poly-crystal oxide film is formed in the upper side of the laminated nitride semiconductor as described above. The wet etching using the acid solution is applied to the poly-crystal oxide film and the globe(41) of nanoscale is formed. The globe of nanoscale is to the etch pattern and the upper side of the nitride base cermets simiconductor layer is dry etched.