| 摘要 |
PURPOSE: A semiconductor memory device and a method for manufacturing the same are provided to improve an operational stability by reducing the parasitic capacitance of bit-lines. CONSTITUTION: A plurality of bit lines(110) is formed into a line shape. The cross section of the bit lines is a wave shape including a concave region and a convex region. A plurality of cell units is connected with the bit lines. A plurality of bit line contacts(112) connects the cell units and the bit lines.
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