| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a WCSP type semiconductor device having a multilayered rewiring structure providing desired electric characteristics by reducing dispersion of the thickness of a rewiring layer in a wafer surface; and a method of manufacturing the same. <P>SOLUTION: This method of manufacturing this semiconductor device executes at least either of: a process of growing a first conductive material by a plating method, in a process of forming a first rewiring layer, to form a first conductive material layer thicker than the first rewiring layer, and polishing a first resist film and the first conductive material layer from principal surface sides to flatten surfaces thereof to form the first rewiring layer; and a process of growing a second conductive material by a plating method, in a process of forming a second rewiring layer, to form a second conductive material layer thicker than the second rewiring layer, and polishing a second resist film and the second conductive material layer from principal surface sides to flatten surfaces thereof to form the second rewiring layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
