| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a thin film transistor with excellent transistor characteristics without the use of an expensive substrate having a monocrystalline silicon layer laminated thereon, or a silicon film which diffuses a catalyst metal, the semiconductor device, and an electrooptical device. <P>SOLUTION: In a process of manufacturing the semiconductor device, germanium is introduced into a partial region of an amorphous silicon film 1, and then heat treatment is performed. As a result, a crystal nucleus is formed in the nucleus-forming element introduction region 1s, and a crystal grain is grown from the crystal nucleus. This method can control the position of a silicon crystal grain and the amount of a grain boundary contained in a channel region 1h. In addition, germanium is not diffused into a channel-region formation region 1i and its peripheral regions such as 1k and 1m. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
