发明名称 |
NANOWIRE MESH DEVICE AND METHOD OF FABRICATING SAME |
摘要 |
A semiconductor structure is provided that includes a plurality of vertically stacked and vertically spaced apart semiconductor nanowires (e.g., a semiconductor nanowire mesh) located on a surface of a substrate. One end segment of each vertically stacked and vertically spaced apart semiconductor nanowires is connected to a source region and another end segment of each vertically stacked and vertically spaced apart semiconductor nanowires is connected to a drain region. A gate region including a gate dielectric and a gate conductor abuts the plurality of vertically stacked and vertically spaced apart semiconductor nanowires, and the source regions and the drain regions are self-aligned with the gate region.
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申请公布号 |
US2010207208(A1) |
申请公布日期 |
2010.08.19 |
申请号 |
US20090371943 |
申请日期 |
2009.02.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;CHANG JOSEPHINE B.;CHANG PAUL;GUILLORN MICHAEL A.;SLEIGHT JEFFERY W. |
分类号 |
H01L29/78;H01L21/302;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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