发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCED BY SAME METHOD |
摘要 |
To prevent bubbles from occurring along a transfer interface, the present method includes the steps of: forming a peeled layer 10 in a transferred member 6 by implanting a peeled-layer forming substance into the transferred member 6; forming a planar surface in the transferred member 6 by planarizing a surface of the transferred member 6; forming a composite including the transferred member 6 and a glass substrate 2 by directly combining the transferred member 6 via the planar surface with a surface of the glass substrate 2; and peeling a part of the transferred member 6 from the composite along the peeled layer 10 serving as an interface by heat-treating the composite.
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申请公布号 |
US2010207212(A1) |
申请公布日期 |
2010.08.19 |
申请号 |
US20080682221 |
申请日期 |
2008.10.21 |
申请人 |
TAKEI MICHIKO;MATSUMOTO SHIN;FUKUSHIMA YASUMORI;TAKAFUJI YUTAKA |
发明人 |
TAKEI MICHIKO;MATSUMOTO SHIN;FUKUSHIMA YASUMORI;TAKAFUJI YUTAKA |
分类号 |
H01L29/786;H01L21/762;H01L29/30 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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