SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

The present disclosure relates to a semiconductor light emitting element that includes an active layer generating light through the recombination of electrons and holes. The active layer comprises: a quantum well made of a first compound semiconductor, and a barrier layer made of a second compound semiconductor. The quantum well includes: a first sub-quantum well having a first band gap; and a second sub-quantum well having a second band gap different from the first band gap.