| 摘要 |
PURPOSE: A program of a nonvolatile memory device and a read-out method thereof are provided to secure the margin of a read-out operation by using a flag cell where the information of a program operation is programmed and setting a pass voltage which is applied to a non-selected memory cell. CONSTITUTION: A first program operation and a first verification operation of a first group memory cell are executed(310). A second program operation which programs a first group and an adjacent second group memory and a second verification operation are executed(350). When the second verification operation is determined to a pass state, a third program operation which programs the first group memory cell is executed(380). A third verification operation of the first group memory cell is executed.
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