发明名称 PROCESS FOR PRODUCING POLYCRYSTAL SILICON
摘要 PROBLEM TO BE SOLVED: To provide a process for producing a polycrystal silicon which facilitates taking out of a polycrystal silicon rod and improves productivity. SOLUTION: The process for producing a polycrystal silicon includes placing a bell-jar in a standing position on a bottom wall base fitted with at least a pair of electrodes, arranging upright a U-shaped silicon core material with both the ends connected to the electrodes in the bell-jar, feeding at least silane gas in the bell jar, while electricity is kept turned on, depositing silicon on the silicone core material by chemical vapor deposition to obtain a polycrystal silicon rod. In the process for producing the polycrystal silicon, prior to taking out of the obtained polycrystal silicon rod from the bell-jar, the electrodes attached to the polycrystal silicon rod is cooled, and the polycrystal silicon rod is broken at the neighborhood of the base, separated from the electrodes. and taken out. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010180078(A) 申请公布日期 2010.08.19
申请号 JP20090023410 申请日期 2009.02.04
申请人 TOKUYAMA CORP 发明人 ASANO TAKUYA;KAMATA MAKOTO
分类号 C01B33/035 主分类号 C01B33/035
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