发明名称 SOLID-STATE IMAGE SENSOR
摘要 A pixel area with a two-dimensional array of pixels (10) each including a photodiode and a memory area (3a) on which memory sections for holding signals produced by the pixels for continuously recordable frames are separately provided on a semiconductor substrate. All the pixels simultaneously perform a photocharge storage operation, and the signals produced by the photocharge storage are extracted in parallel through mutually independent pixel output lines (14). In a plurality of memory sections connected to one pixel output line, a sample-and-hold transistor of a different memory section is turned on for each exposure cycle so as to sequentially hold signals in a capacitor of each memory section. After the continuous imaging is completed, all the pixel are sequentially read. Unlike CCD cameras, the present sensor does not simultaneously drive all the gate loads. Therefore, the sensor consumes less power yet can be driven at high speeds. The separation between the memory area and pixel area prevents signals from deterioration due to an intrusion of excessive photocharges. As a result, the sensor can perform imaging operations at higher speeds than ever before and yet capture images with higher qualities.
申请公布号 US2010208115(A1) 申请公布日期 2010.08.19
申请号 US20080676562 申请日期 2008.09.04
申请人 TOHOKU UNIVERSITY;SHIMADZU CORPORATION 发明人 SUGAWA SHIGETOSHI;KONDO YASUSHI;TOMINAGA HIDEKI
分类号 H04N5/335;H04N5/355;H04N5/3745 主分类号 H04N5/335
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