SEMICONDUCTOR MEMORY DEVICE INCLUDING GUARD-RING REGION

摘要

PURPOSE: A semiconductor memory device including a guard-ring region is provided to block the influence of noises by forming the guardring region inside a cell block. CONSTITUTION: A plurality of memory cells is formed in a cell block(CB). A formed guardring region(210) is formed inside the cell block. A sense-amplifying region amplifies data stored in the memory cell of the cell block. A second guardring region is formed between the cell block and the sense-amplifying region. A bulk-bias voltage is applied to the first guarding region and the second guardring region.