| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film forming method capable of shortening the lead time of a process relating to the deposition of a substrate including preliminary deposition and improving the efficiency of production. SOLUTION: The thin film forming method for deposition of the substrate inside a deposition chamber after performing the preliminary deposition inside the deposition chamber includes: a step of raising a temperature inside the deposition chamber to a preliminary deposition temperature T<SB>1</SB>before starting the preliminary deposition; a step of performing the preliminary deposition such that a temperature profile is not turned to a fixed value throughout the preliminary deposition keeping the temperature inside the deposition chamber in a temperature range lower than the preliminary deposition temperature T<SB>1</SB>and equal to or higher than a deposition temperature T<SB>2</SB>; and a step of starting the deposition to the substrate after the temperature inside the deposition chamber reaches the deposition temperature T<SB>2</SB>. COPYRIGHT: (C)2010,JPO&INPIT |
