| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which achieves high-speed reading using sensing technology of a voltage differential amplifying system. SOLUTION: In read access, a first switch and a second switch are turned on in a pre-charge period before a memory cell is accessed so that charges of a bit line charge voltage generating circuit are distributed to a bit line and a reference bit line, to thereby charge the bit line and the reference bit line to an initial voltage. After the charge, a selected memory cell is connected to the bit line, the reference bit line is connected to a reference voltage generating circuit, and a voltage differential type sense amplifier amplifies difference voltage between voltage of the bit line decreased by discharge of the selected memory cell and voltage of the reference bit line generated by the reference voltage generating circuit, to thereby read out memory cell data. COPYRIGHT: (C)2010,JPO&INPIT |
