| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve temperature characteristics of a reference voltage without increasing the area of a reference voltage generation circuit device formed by a depletion type MOS transistor and an enhanced type MOS transistor. Ž<P>SOLUTION: The concentration profile of the depletion type MOS transistor is controlled so that impurity concentration at the surface side of the substrate of a first-conductivity-type channel region is small and impurity concentration of the first-conductivity-type channel region near a PN junction to be formed becomes large at the first-conductivity-type channel region and the second-conductivity-type substrate region or a well region, thus improving temperature characteristics of a reference voltage. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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